CZOCHRALSKI PROCESS OF SILICON WAFERS

Описание: Czochralski process is named in conjunction with a Polish scientist called Jan Czochralski, who invented the development in 1916. In the Czochralski process, a seed crystal is dipped into a crucible of molten silicon and withdrawn slowly, pulling a cylindrical single crystal as the silicon crystallizes on the seed. Czochralski process used to produce high volume of Silicon single crystals.