Charge Carrier Concentration of Doped Semiconductors
Автор: Jordan Edmunds Chetty
Загружено: 2018-03-29
Просмотров: 55585
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In this video, I talk about how doping affects the electron and hole concentration of n-type and p-type semiconductors, and how this in turn affects the fermi energy level of the semiconductor, one of the most fundamental and useful quantities in semiconductor physics.
This is part of my series on semiconductor physics (often called Electronics 1 at university). This is based on the book Semiconductor Physics and Devices by Donald Neamen, as well as the EECS 170A/174 courses taught at UC Irvine.
Hope you found this video helpful, please post in the comments below anything I can do to improve future videos, or suggestions you have for future videos.
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