PN Junction Diode Characteristics

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#PN Junction Diode Characteristics

A PN junction diode is a fundamental semiconductor device that forms the basis of many electronic components. It consists of two regions of semiconductors with different doping levels: the P-region, which is positively doped, and the N-region, which is negatively doped. When these two regions are brought together to form a junction, interesting electronic properties arise.

The PN junction diode exhibits the following characteristics:

Forward Bias: When a positive voltage is applied to the P-region and a negative voltage to the N-region, the diode is said to be forward-biased. This reduces the barrier potential at the junction, allowing current to flow easily through the diode. The forward current increases rapidly with increasing forward voltage.

Reverse Bias: When a negative voltage is applied to the P-region and a positive voltage to the N-region, the diode is said to be reverse-biased. This increases the barrier potential at the junction, inhibiting the flow of current. The reverse current is very low and remains relatively constant over a range of reverse voltages until breakdown occurs.

VI characteristics of P-N junction diodes is a curve between the voltage and current through the circuit. Voltage is taken along the x-axis while the current is taken along the y-axis.