LT-InGaAs/InAlAs Multilayer Heterostructure (MLHS) on 3-inch InP Substrate

Описание: LT-InGaAs/InAlAs Multilayer Heterostructure (MLHS) on 3-inch InP Substrate
Resistivity (@300K) of doped or un-doped LT-InGaAs/InAlAs MLHS
≥ 1000 Ω⋅cm
Carrier Mobility (@300K) ≥ 2000 cm2/(V⋅s)
Carrier Lifetime - less than 1 picosecond
Surface morphology - Mirror finish
Substrate - 3-inch diameter semi-insulating (s.i) Fe Doped InP
Substrate Resistivity (@300K) ≥ 10^7 Ω⋅cm
Layer Structure
~12nm LT-InGaAs (Doped/Un-doped)
~8nm LT-in Al As
Top two layers will be repeated x100
3-inch s.i InP Substrate