Week 3: BJT principles: Recombination in Base, Base Width Modulation, Biasing, Large Signal Models
Автор: Debashish Nandi
Загружено: 2025-08-09
Просмотров: 106
Описание:
This video contains the Week-3 Tutorial Session held by Mr. Debashish Nandi (TA, PMRF, IIT-K) for the NPTEL course on Microelectronics: Devices to Circuits, 2025 (by Prof. Sudeb Dasgupta, IIT Roorkee).
In this Week 3 lecture on BJT Working Principles, we cover:
✅ Amplification: BJT vs. Two P-N Junction diodes connected back-to-back
✅ Recombination of minority carriers in Base and Base width modulation
✅ Common Emitter Biasing: Constant Current Biasing, Base-Collection Feedback, Voltage Divider (Thevenin's Theorem)
✅ Large Signal Models: T-model, π-model, and Ebers-Moll Model
✅ Silicon BJT—Why is VCEsat = 0.2 V?
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