Hole spin qubits in Si and Ge quantum dots: Ultrafast gates and noise resilient qubits
Автор: IQubits
Загружено: 2021-07-17
Просмотров: 692
Описание:
Hole spin qubits in Si and Ge quantum dots: Ultrafast gates and noise resilient qubits - Hosted - IQubits Special Seminar 2021 - 14 July 2021.
Abstract — Hole spin qubits in Si and Ge quantum dots are frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient and ultrafast all-electric qubit control , but at the same time enhance the susceptibility of the qubit to charge noise. We show that these interactions can be fully tuned by the design of the quantum dot and by external electric fields, resulting in sweet spots where charge noise is removed . Remarkably, at these sweet spots also the noise caused by the hyperfine interactions with nuclear spins another leading source of decoherence in spin qubits can be suppressed, greatly enhancing the coherence of these qubits.
To get access to the flyer, visit https://www.iqubits.eu/media/videos.
Повторяем попытку...
Доступные форматы для скачивания:
Скачать видео
-
Информация по загрузке:
