"Particle Based Simulation of Wide Bandgap Devices" (Stephen M. Goodnick, ASU)

Описание: "Particle Based Simulation of Wide Bandgap Devices"
Stephen M. Goodnick
Department of Electrical Engineering, Arizona State University

Abstract: Wide bandgap materials such as GaN and SiC as well as ultra-wide bandgap like diamond offer the potential for greatly improved power electronic device performance due to their predicted higher breakdown fields limited by avalanche breakdown, as well as their favorable transport characteristics such as high mobility and drift velocity, which reduce on-resistance and allow for high frequency operation in power conversion applications. Experimental data on the high field transport properties of such materials such as the impact ionization coefficients are relatively limited, with considerable variability. Hence, to understand the limits of performance of these wide bandgap materials, we have investigated the high field transport properties of wide bandgap materials using particle based full-band Cellular Monte Carlo (CMC) high field transport simulation incorporating first principles approaches. In this talk, we will discuss the CMC method as applied to the simulation of wide bandgap material and devices in comparison to experiment.

Bio: Stephen M. Goodnick is the David and Darleen Ferry Professor of Electrical Engineering at Arizona State University. He served as Chair and Professor of Electrical Engineering 1996- 2005 and as Associate Vice President for Research 2006-2008, and presently serves as Deputy Director of ASU Lightworks as well as the DOE ULTRA Energy Frontier Research Center. He is also a Hans Fischer Senior Fellow with the Institute for Advanced Studies at the Technical University of Munich. Professionally, he served as President (2012-2013) of the IEEE Nanotechnology Council and President of IEEE Eta Kappa Nu Electrical and Computer Engineering Honor Society Board of Governors, 2011-2012. Some of his main research contributions include analysis of surface roughness at the Si/SiO2 interface, Monte Carlo simulation of ultrafast carrier relaxation in quantum confined systems, global modeling of high frequency and energy conversion devices, full-band simulation of semiconductor devices, transport in nanostructures, and fabrication and characterization of nanoscale semiconductor devices. He has published over 450 journal articles, books, book chapters, and conference proceedings, and is a Fellow of IEEE (2004) and AAAS (2022) for contributions to carrier transport fundamentals and semiconductor devices.