Measurement of Magneto Resistance - Experiment
Автор: INSIF ELECTRONICS
Загружено: 2017-08-22
Просмотров: 20297
Описание:
MEASUREMENT OF MAGNETO RESISTANCE OF A SEMICONDUCTOR
OBJECTIVE:
To study the magnetic field dependence of the transverse magnetoresistance of a given semiconductor (Ge) sample.
Theory :
The magnetoresistance is defined as the ratio of change in resistance of a substance due to application of magnetic field to its resistance in zero field. Under the influence of a magnetic field, the electrons in a solid material do not follow the exact direction of superimposed electric field, instead take a curved path. This results in effective decrease of the mean free path and hence an increase in the resistivity of the sample. When magnetic field is applied normal to the current flow, the effect is termed as transverse magnetoresistance and when field is applied parallel to the current flow, it is termed as longitudinal magnetoresistance.
Apparatus:
Commercial setup with the following components:
A. Gauss & Magneto Resistance Meter
B. Electromagnet Power Supply
C. Electromagnet10kgauss
D. Gauss Probe
E. Ge Crystal Probe
F. Stand For Probe
G. Connecting Wires
Insif Electronics
[email protected]
[email protected]
Повторяем попытку...
Доступные форматы для скачивания:
Скачать видео
-
Информация по загрузке:
![Пожалуй, главное заблуждение об электричестве [Veritasium]](https://imager.clipsaver.ru/6Hv2GLtnf2c/max.jpg)
