How to check for Electrical overstress using Calibre® PERC™
Автор: IC Nanometer Design
Загружено: 2013-12-18
Просмотров: 2149
Описание: Electrical overstress (EOS) is responsible for the vast majority of device failures and product returns. The use of multiple voltages increases the risk of EOS, so IC designers need to increase their diligence to ensure that thin-oxide digital transistors do not have direct or indirect paths to high-voltage portions of the design.This video shows how users can check for Electrical overstress using Calibre® PERC™ and use Calibre RVE to debug the results and eliminate the source of EOS failures.
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