Coding and Bounds for Partially Defect Memory Cells Haider Al Kim NVMW21
Автор: Dr. Haider A. Al Kim
Загружено: 2021-02-28
Просмотров: 44
Описание: This work summarizes our conference papers that were published 2019 (Redundancy, Moscow) and 2020 (ACCT, Bulgaria). Here, we explain the one of the main code constructions and bounds for the partially stuck memory cells (the cells that can store levels at least 1)
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