Ultrathin GaP crystals to measure ultrabroadband THz generated on Spintronics THZ emitter and DSTMS

Описание: Ultrathin GaP crystals to measure ultrabroadband THz generated on Spintronics THZ emitter and DSTMS organic crystals

Del Mar Photonics, Inc. is a leading manufacturer and system integrator of advanced photonics products for scientific and industrial applications. We offer a broad range of lasers, optics, optical crystals, and related instrumentation.
Our terahertz product line includes THz crystals such as ZnTe, GaP, GaSe, CdSe, LN, MgO:LiNbO3; photoconductive antennas; THz vacuum viewports; THz beamsplitters; THz optics; high-power THz sources; and more.
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Gallium phosphide (GaP) electro-optic (EO) crystals are a widely used and robust platform for measuring ultrabroadband terahertz (THz) radiation, particularly in table-top and high-field ultrafast spectroscopy systems. When THz pulses are generated using a 1.5 µm pump source, such as in spintronic THz emitters or organic nonlinear crystals like DSTMS, ultrathin GaP crystals provide a practical and reliable solution for broadband THz detection.

At a pump wavelength of 1.5 µm, GaP is not strictly phase-matched for EO sampling. However, this limitation can be effectively mitigated by reducing the crystal thickness. In ultrathin GaP plates, the reduced interaction length minimizes phase-mismatch and group-velocity walk-off between the optical probe and the THz field. As a result, the detected EO signal preserves high-frequency components, enabling THz bandwidths extending beyond 10 THz and approaching ~20 THz, limited primarily by phonon absorption and system response rather than phase matching.

For spintronic THz emitters, which are known for producing extremely broadband, gap-free THz spectra, ultrathin GaP offers excellent temporal fidelity and mechanical robustness compared to more fragile organic EO crystals. Similarly, when characterizing THz pulses generated in DSTMS, which can produce strong fields with spectral content well into the mid-THz range, thin GaP crystals allow accurate field-resolved detection without the handling and environmental sensitivity issues often associated with organic materials.

Key advantages of GaP for ultrabroadband THz detection include:
High damage threshold and long-term stability
Low optical absorption at 1.5 µm, making it compatible with Er-fiber-based systems
Well-established EO coefficients and reproducible response
Compatibility with standard balanced EO sampling setups

In summary, ultrathin GaP crystals remain a workhorse solution for ultrabroadband THz electro-optic detection at 1.5 µm, bridging the gap between durability and high-frequency performance. They are especially well suited for modern THz sources such as spintronic emitters and DSTMS, where spectral coverage, temporal resolution, and experimental robustness are equally critical.

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