MOSFET I-V| GCA method| Dain Current derivation| NMOS | PMOS| Numerical Example | microelectronics
Автор: MOASIZ
Загружено: 2025-09-25
Просмотров: 142
Описание:
In this video, we derive the MOSFET drain current equations step by step using the Gradual Channel Approximation (GCA) model.
We begin with NMOS analysis, extend the results to PMOS, and explore all operating regions — cut-off, linear, and saturation — including the important pinch-off effect in saturation.
Finally, we solve a numerical parameter extraction problem.
This session is ideal for VLSI, Electronics, and Semiconductor Device students, as well as those preparing for GATE, ESE, and university exams.
Topics Covered:
✔️ GCA model assumptions
✔️ Derivation of drain current equations (NMOS & PMOS)
✔️ MOSFET operating regions and equations
✔️ Pinch-off and channel length modulation
✔️ Numerical problem: parameter extraction from measurement data
📘 Useful for: VLSI Design, Device Physics, CMOS circuits, IC design learners.
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