CoolSiC™ MOSFETs 1200 V in D2PAK-7L
Автор: Bodo's Power Systems
Загружено: 2020-12-09
Просмотров: 589
Описание:
Michael Voelkl, Infineon:
The CoolSiC™ 1200 V, SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses and 3 µs SCWT (short-circuit withstand time) of CoolSiC™ technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies
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